Adaptive read and write systems and methods for memory cells
US7941590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Jan 2, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Adaptive memory read and write systems and methods are described herein that adapts to changes to threshold voltage distributions of memory cells as of result of, for example, the detrimental affects of repeated cycling operations of the memory cells. The novel systems may include at least multi-level memory cells, which may be multi-level flash memory cells, and a computation block operatively coupled to the multi-level memory cells. The computation block may be configured to compute optimal or near optimal mean and detection threshold values based, at least in part, on estimated mean and standard deviation values of level distributions of the multi-level memory cells. The optimal or near optimal mean and detection threshold values computed by the computation block may be subsequently used to facilitate writing and reading, respectively, of data to and from the multi-level memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.