Patent · US Active

Ion implantation process characterization method

US7943402B2 · kind B2 · utility

1Cited by

1References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Frederic Milesi · Paris, FR
Frédéric Mazen · Grenoble, FR

Key dates

Filing date	Feb 4, 2010
Grant date	May 17, 2011
Priority date	—
Expiry date	Feb 4, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being obtained by the ion implantation process to be characterized; a second step of measuring a parameter representative of an electrical conduction of the degraded PN junction and a dispersion of the parameter on a surface on which the degraded PN junction is produced, the parameter and the dispersion forming a reference parameter and a reference dispersion, the first and second steps being repeated in time so as to follow the evolution of the parameter representative of electrical conduction with relation to the reference parameter and the dispersion of the representative parameter with relation to the reference dispersion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.