Method of manufacturing semiconductor device
US7943433B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Oct 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor chip has a rectangular main surface with first and second vertices on a diagonal line and first and second sides connecting the first and second vertices. A wire is formed between an electrode and a pad of the semiconductor chip. The wire is enclosed in a cavity of a mold. A liquid resin is poured into the cavity to flow from the first vertex toward the second vertex along the first and second sides. The liquid resin is cured to form a resin portion. The wire is formed such that the wire extends on the side relatively further from the first vertex with respect to a straight line connecting the pad and electrode as seen in plan view. Wires are thus prevented from contacting each other in the process of pouring the liquid resin and accordingly electrical short circuit between the wires can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.