Patent · US Active

Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology

US7943438B2 · kind B2 · utility

8Cited by
8References
9Claims
0Family size

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Key dates

Filing dateFeb 14, 2008
Grant dateMay 17, 2011
Priority date
Expiry dateSep 18, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/711

Abstract

A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.