Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology
US7943438B2 · kind B2 · utility
8Cited by
8References
9Claims
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Key dates
| Filing date | Feb 14, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.