Multi-component strain-inducing semiconductor regions

US7943469B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ted COOK, JR. · Hillsboro, US
• Bernhard Sell · Dresden, DE
• Anand S. Murthy · Beaverton, US

Key dates

• Filing date: Nov 28, 2006
• Grant date: May 17, 2011
• Expiry date: Mar 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/027

Abstract

A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In one embodiment, the multi-component strain-inducing material region comprises a first portion and a second portion which are separated by an interface. In a specific embodiment, the concentration of charge-carrier dopant impurity atoms of the two portions are different from one another at the interface.