EDRAM including metal plates

US7943474B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas W. Dyer · Pleasant Valley, US
• Keith Kwong Hon Wong · Wappingers Falls, US
• Mahender Kumar · Hopewell Junction, US

Key dates

• Filing date: Feb 24, 2009
• Grant date: May 17, 2011
• Expiry date: Aug 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode.An upper electrode is then formed on the conformal dielectric layer. The forming of the upper electrode may include a conformal deposition of metal nitride layer, and a non-conformal deposition of an electrically conductive material atop the metal nitride layer, in which the electrically conductive material encloses the at least one trench.