Method of forming nitride film and nitride structure
US7943492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Nov 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.