Jaeun Yoo
3Patents
2h-index
6Co-inventors
30Inventor score
Filing activity: Jun 21, 2006 → Jun 23, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7569461B2 | Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device | Electricity | 5 | Active |
| US8026156B2 | Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device | Electricity | 2 | Active |
| US7943492B2 | Method of forming nitride film and nitride structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.