Method for blocking dislocation propagation of semiconductor
US7943494B2 · kind B2 · utility
1Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Nov 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.