Method for manufacturing an SOI substrate
US7943497B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2006 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Mar 10, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate surface serving as an SOI region and a substrate surface serving as a bulk region are made to form the same plane easily and highly accurately, a thickness of a buried oxide film is made uniform, and the buried oxide film is also prevented from being exposed on the substrate surface. After partially forming a mask oxide film (19) on a surface of a silicon substrate (12), an oxygen ions (16) are implanted into the surface of the substrate through this mask oxide film, and the substrate is further subjected to annealing treatment to form a buried oxide film (13) inside the substrate. Between the step of forming the mask oxide film and the step of implanting the oxygen ions, a recess portion (12c) with a predetermined depth deeper than a substrate surface (12b) serving as the bulk region where the mask oxide film has been formed is formed in a substrate surface (12a) serving as the SOI region where the mask oxide film is not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.