Semiconductor substrate cleaning methods, and methods of manufacture using same
US7943562B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jul 31, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.