Multi-layer phase-changeable memory devices
US7943918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.