Strain bars in stressed layers of MOS devices
US7943961B2 · kind B2 · utility
7Cited by
138References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Apr 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/792
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.