Semiconductor memory element
US7943981B2 · kind B2 · utility
1Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Nov 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.