Power semiconductor device with interconnected gate trenches
US7943990B2 · kind B2 · utility
3Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2006 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Aug 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.