Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory

US7944003B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ibrahim Ban · Beaverton, US
• Avci E. Uygar · Beaverton, US
• David L. Kencke · Beaverton, US

Key dates

• Filing date: Nov 30, 2009
• Grant date: May 17, 2011
• Expiry date: Nov 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

An improved dynamic memory cell using a semiconductor fin or body is described. Asymmetrical doping is used in the channel region, with more dopant under the back gate to improve retention without significantly increasing read voltage.