Power transistor and method for controlling a power transistor
US7944269B2 · kind B2 · utility
2Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.