Constant reference cell current generator for non-volatile memories
US7944281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Feb 10, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/24
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.