MOSYS, INC.
79Patents
70Active
79Granted
54Portfolio score
Filing activity: Jul 15, 1996 → Feb 18, 2018 · 35 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5784705A | Method and structure for performing pipeline burst accesses in a semiconductor memory | Physics | 96 | Expired |
| US8044724B2 | Low jitter large frequency tuning LC PLL for multi-speed clocking applications | Electricity | 42 | Active |
| US7353438B2 | Transparent error correcting memory | Physics | 25 | Expired |
| US7447104B2 | Word line driver for DRAM embedded in a logic process | Electricity | 24 | Active |
| US7671401B2 | Non-volatile memory in CMOS logic process | Physics | 23 | Active |
| US7533222B2 | Dual-port SRAM memory using single-port memory cell | Physics | 23 | Active |
| US9037928B2 | Memory device with background built-in self-testing and background built-in self-repair | Physics | 22 | Active |
| US7392456B2 | Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory | Physics | 22 | Expired |
| US7391647B2 | Non-volatile memory in CMOS logic process and method of operation thereof | Physics | 21 | Expired |
| US8901747B2 | Semiconductor chip layout | Electricity | 15 | Active |
| US7323379B2 | Fabrication process for increased capacitance in an embedded DRAM memory | Electricity | 14 | Expired |
| US8161355B2 | Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process | Physics | 11 | Active |
| US8274326B2 | Equalization circuit | Electricity | 10 | Active |
| US6259651A | Method for generating a clock phase signal for controlling operation of a DRAM array | Physics | 10 | Expired |
| US7634707B2 | Error detection/correction method | Emerging Cross-Sectional Technologies | 9 | Expired |
| US9361196B2 | Memory device with background built-in self-repair using background built-in self-testing | Physics | 8 | Active |
| US7929359B2 | Embedded DRAM with bias-independent capacitance | Electricity | 8 | Active |
| US6078547A | Method and structure for controlling operation of a DRAM array | Physics | 7 | Expired |
| US7633810B2 | Non-volatile memory embedded in a conventional logic process and methods for operating same | Physics | 7 | Active |
| US8635417B2 | Memory system including variable write command scheduling | Physics | 7 | Active |
| US6147535A | Clock phase generator for controlling operation of a DRAM array | Physics | 6 | Expired |
| US8527676B2 | Reducing latency in serializer-deserializer links | Physics | 5 | Active |
| US9054578B2 | Hybrid driver including a turbo mode | Electricity | 5 | Active |
| US7382658B2 | Non-volatile memory embedded in a conventional logic process and methods for operating same | Physics | 5 | Active |
| US8269538B2 | Signal alignment system | Physics | 5 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.