High contrast lithographic masks
US7944545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.