Write method with voltage line tuning
US7944730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.