Magnetic memory cell based on a magnetic tunnel junction (MTJ) with independent storage and read layers
US7944737B2 · kind B2 · utility
4Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a first free layer optimized for reading; and a second free layer separate from the MTJ and optimized for writing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.