Multi-level cell programming of PCM by varying the reset amplitude
US7944740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Nov 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device and a method for programming the same. The method includes determining a characterized lowest SET current and corresponding SET resistance for the phase change memory device. The method includes determining a characterized RESET current slope for the phase change memory device. The method also includes calculating a first current amplitude for a RESET pulse based on the characterized lowest SET current and the characterized RESET current slope. The method includes applying the RESET pulse to a target memory cell in the phase change memory device and measuring the resistance of the target memory cell. If the measured resistance is substantially less than a target resistance, the method further includes applying one or more additional RESET pulses. In one embodiment of the invention, the one or more additional RESET pulses have current amplitudes greater than a previously applied RESET pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.