Inventor · Hsinchu, TW

Ming-Hsiu Lee

142Patents
13h-index
60Co-inventors
89Inventor score

Filing activity: Sep 15, 1998 → Apr 1, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8203187B2 3D memory array arranged for FN tunneling program and erase Electricity 294 Active
US8426294B2 3D memory array arranged for FN tunneling program and erase Electricity 154 Active
US7209390B2 Operation scheme for spectrum shift in charge trapping non-volatile memory Physics 65 Expired
US8437192B2 3D two bit-per-cell NAND flash memory Electricity 52 Active
US7266014B2 Method of operating non-volatile memory device Physics 47 Expired
US7554873B2 Three-dimensional memory devices and methods of manufacturing and operating the same Physics 32 Active
US6002114A Control device for an electric water heater Mechanical Engineering; Lighting; Heating 24 Expired
US8036014B2 Phase change memory program method without over-reset Physics 20 Active
US7777275B2 Silicon-on-insulator structures Electricity 19 Active
US7324377B2 Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells Physics 17 Expired
US7944740B2 Multi-level cell programming of PCM by varying the reset amplitude Physics 16 Active
US8324605B2 Dielectric mesh isolated phase change structure for phase change memory Electricity 14 Active
US7656701B2 Method for programming a multilevel phase change memory device Physics 13 Active
US8363463B2 Phase change memory having one or more non-constant doping profiles Physics 13 Active
US8238149B2 Methods and apparatus for reducing defect bits in phase change memory Physics 12 Active
US7272037B2 Method for programming a multilevel phase change memory device Physics 11 Expired
US8699258B2 Verification algorithm for metal-oxide resistive memory Physics 11 Active
US8634235B2 Phase change memory coding Physics 10 Active
US8350316B2 Phase change memory cells having vertical channel access transistor and memory plane Physics 10 Active
US7092038B2 Adaptive Y/C separation circuit Electricity 8 Expired
US8891293B2 High-endurance phase change memory devices and methods for operating the same Physics 8 Active
US8077506B2 Method for programming a multilevel phase change memory device Physics 8 Active
US7088613B2 Method for controlling current during read and program operations of programmable diode Physics 8 Expired
US7869270B2 Set algorithm for phase change memory cell Physics 7 Active
US6890819B2 Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof Electricity 7 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.