Methods of making a semiconductor memory device
US7944743B2 · kind B2 · utility
4Cited by
142References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4016
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One-transistor (1T) capacitor-less DRAM cells each include a MOS transistor having a bias gate layer that separates a floating body region from a base substrate. The MOS transistor functions as a storage device, eliminating the need of the storage capacitor. Logic “1” is written to and stored in the storage device by causing majority carriers (holes in an NMOS transistor) to accumulate and be held in the floating body region next to the bias gate layer, and is erased by removing the majority carriers from where they are held.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.