Method of forming a shallow trench isolation structure
US7947551B1 · kind B1 · utility
28Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2010 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer is formed on the sidewalls and the bottom surface. A flowable dielectric material is filled in the trench. An anneal process is performed to densify the flowable dielectric material and convert the silicon liner layer into a silicon oxide layer simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.