Method for producing a semiconductor including a foreign material layer

US7947569B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Anton Mauder · Kolbermoor, DE
• Frank Pfirsch · Birkenfeld, DE
• Rudolf Berger · Munich, DE
• Stefan Sedlmaier · Munich, DE
• Wolfgang Lehnert · Lintach, DE
• Raimund Foerg · Straubing, DE

Key dates

• Filing date: Jun 30, 2008
• Grant date: May 24, 2011
• Expiry date: Jul 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.