Material infusion in a trap layer structure using gas cluster ion beam processing
US7947582B2 · kind B2 · utility
29Cited by
8References
22Claims
0Family size
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Key dates
| Filing date | Feb 27, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Mar 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers in the trap layer structure by exposing the trap layer structure to a gas cluster ion beam (GCIB).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.