Floating body field-effect transistors, and methods of forming floating body field-effect transistors

US7948008B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jun Liu · 红钢城街道, CN
• Michael P. Violette · Boise, US
• Chandra Mouli · Boise, US
• Howard C. Kirsch · Eagle, US
• Di Li · Lanzhou, CN

Key dates

• Filing date: Oct 26, 2007
• Grant date: May 24, 2011
• Expiry date: Jul 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1-x)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1-x)-comprising region and the gate dielectric. The semiconductor SixGe(1-x)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors.