Patent · US Active

Memory repair system and method

US7949908B2 · kind B2 · utility

9Cited by

4References

64Claims

0Family size

Assignee

Marvell Israel (M.I.S.L) Ltd. · IL

Inventors

Reshef Bar Yoel · Haifa, IL
Yosef Solt · Sachnin, IL
Michael Levi · Haifa, IL
Yosef Haviv · Haifa, IL

Key dates

Filing date	Oct 9, 2007
Grant date	May 24, 2011
Priority date	—
Expiry date	Jan 17, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/72
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A self-repairing memory system includes memory including memory elements and redundant memory elements. The memory elements include a plurality of memory cells. A memory repair module identifies non-operational memory cells and selects at least one memory element including the non-operational memory cells. A first repair sub-circuit soft repairs the memory by substituting the selected memory elements with the redundant memory elements. A second repair sub-circuit hard repairs the memory based on the substitutions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.