Plasma etching apparatus
US7951261B2 · kind B2 · utility
8Cited by
9References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2006 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | May 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32532
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.