Plasma processing apparatus and method
US7951262B2 · kind B2 · utility
463Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.