Method of manufacturing semiconductor device having device characteristics improved by straining surface of active region
US7951686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2010 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/795
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.