Patent · US Active

Method for producing a thin semiconductor chip comprising an integrated circuit

US7951691B2 · kind B2 · utility

3Cited by

8References

19Claims

0Family size

Assignee

Institut für Mikroelektronik Stuttgart · DE

Inventors

Joachim Norbert Burghartz · Shrub Oak, US
Martin Zimmermann · Sasbach, DE
Wolfgang Appel · Kelkheim, DE

Key dates

Filing date	Sep 11, 2008
Grant date	May 31, 2011
Priority date	—
Expiry date	Sep 11, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method for producing a thin film chip including an integrated circuit, a semi-conductor wafer having a first surface is provided. At least one cavity is produced under a defined section of the first surface by means of porous silicon. A circuit structure is produced in the defined section. The defined wafer section is subsequently released from the semiconductor wafer by severing local web-like connections, which hold the wafer section above the cavity and on the remaining semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.