Metal precursors for semiconductor applications

US7951711B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventor

• Christian Dussarrat · Tokyo, JP

Key dates

• Filing date: May 21, 2008
• Grant date: May 31, 2011
• Expiry date: Aug 21, 2028

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/18
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.