Method of forming a contact hole for a semiconductor device
US7951720B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jun 29, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jun 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming contact holes of a semiconductor device includes forming a reaction layer that is provided with a reaction pattern on a semiconductor substrate. Subsequently, a self-assembled monolayer is formed by injecting a polymer from a functional group that is capable of being chemically bonded to the reaction pattern. A coating layer is then formed on substantially all of the structure that includes the self-assembled monolayer. Afterwards, the contact holes are formed on the semiconductor substrate by performing an etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.