Semiconductor device having IGBT and diode
US7952143B2 · kind B2 · utility
7Cited by
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8Claims
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Key dates
| Filing date | May 7, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Oct 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.