MOS transistor device in common source configuration
US7952145B2 · kind B2 · utility
35Cited by
18References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2007 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jan 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a first p-channel laterally diffused metal oxide semiconductor (LDMOS) transistor formed over the semiconductor substrate and additional p-channel LDMOS transistors formed over the semiconductor substrate. First drain and gate electrodes are formed over the substrate and are coupled to the first LDMOS transistor. Additional drain and gate electrodes are formed over the substrate and are coupled to the second LDMOS transistor. A common source electrode for the first and second LDMOS transistors is also formed over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.