Semiconductor memory device
US7952393B2 · kind B2 · utility
0Cited by
5References
13Claims
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Key dates
| Filing date | Oct 29, 2010 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Oct 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes an enable signal generating unit for generating an enable signal in response to an active signal and an internal voltage driving unit driven by the active signal and the enable signal, wherein the internal voltage driving unit drives an internal voltage by comparing the internal voltage and a reference voltage and then generating first and second driving signals, and wherein the enable signal generating unit receives the second driving signal and then determines enablement of the enable signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.