Increasing read throughput in non-volatile memory
US7952928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2008 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Mar 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Read throughput is increased in a non-volatile memory device by sensing storage elements which are of interest as soon as a word line voltage has propagated to them, but before the word line voltage has propagated to other storage elements which are not of interest. The delay which would be incurred by waiting for the voltage to propagate along the entire word line is avoided. The sensing can occur during programming, as a verify operation, or after programming, as where user data is read. Further, the storage elements may be sensed concurrently, e.g., via sense amplifiers. Data from the storage elements of interest is processed and data from the other storage elements is discarded. A time for sensing the storage elements of interest can be set by identifying which storage elements are being verified or include data which is requested by a read command.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.