Wordline driver for a non-volatile memory device, a non-volatile memory device and method
US7952937B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Aug 25, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A wordline driver, for a non-volatile memory device, comprises a wordline driver output, a first power source, adapted to provide an erase level voltage for erasing portions of the non-volatile memory device, a second power source, adapted to provide read and program level voltages for reading and programming portions of the non-volatile memory device and first switching means, including an isolation transistor, adapted to connect the wordline driver output to a one of the first and second power sources dependent upon an operating mode of the wordline driver. The wordline driver further comprises a programmable switch controller for providing a variable control signal to a control electrode of the isolation transistor. The programmable switch controller is arranged to set the variable control signal to a value dependent upon the operating parameters of the non-volatile memory device and such that the endurance of the isolation transistor is maximised.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.