Patent · US Active

Variable reference voltage circuit for non-volatile memory

US7952942B1 · kind B1 · utility

4Cited by

11References

20Claims

0Family size

Assignee

Cypress Semiconductor Corporation · US

Inventors

Harold Kutz · Edmonds, US
Mark Rouse · Snohomish, US
Eric D. Blom · Carmel, US

Key dates

Filing date	Aug 11, 2009
Grant date	May 31, 2011
Priority date	—
Expiry date	Aug 11, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/04
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.