Apparatus for fabricating a III-V nitride film
US7955437B2 · kind B2 · utility
6Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Dec 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.