Copper-passivating CMP compositions and methods
US7955520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Feb 28, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/06
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.