Positive resist composition and pattern forming method using the same
US7955780B2 · kind B2 · utility
3Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided is a positive resist composition using a resin having, in the polymer main chain, a specific acid decomposable structure and further having, in the side chain thereof, several specific acid decomposable groups, satisfactory in an exposure latitude, a focus latitude, and pattern collapse prevention at a high level, and having reduced development defects; and a pattern forming method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.