Patent · US Active

Method of fabricating a semiconductor device

US7955873B2 · kind B2 · utility

0Cited by

1References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Mengel · Bad Abbach, DE
Thomas Spoettl · Mintraching, DE
Frank Pueschner · Kelheim, DE

Key dates

Filing date	Mar 31, 2009
Grant date	Jun 7, 2011
Priority date	—
Expiry date	Aug 27, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.