Manufacturing method of fin-type field effect transistor

US7955922B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Hajime NAKABAYASHI · Yamanashi, JP
• Takuya Sugawara · Yokohama, JP
• Takashi Kobayashi · Suzaka, JP
• Junichi Kitagawa · Amagasaki, JP
• Yoshitsugu Tanaka · Nirasaki, JP

Key dates

• Filing date: Jan 11, 2008
• Grant date: Jun 7, 2011
• Expiry date: Apr 25, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0245

Abstract

A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.