Structure and method of fabricating FinFET

US7955928B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kevin K. Chan · Staten Island, US
• Zhibin Ren · Hopewell Junction, US
• Xinhui Wang · Poughkeepsie, US

Key dates

• Filing date: Mar 30, 2009
• Grant date: Jun 7, 2011
• Expiry date: Jun 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0193

Abstract

A CMOS FinFET device and a method of manufacturing the same using a three dimensional doping process is provided. The method of forming the CMOS FinFET includes forming fins on a first side and a second side of a structure and forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure. The method further includes annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure. The method further includes protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.