Method of forming a semiconductor device having an active area and a termination area
US7955929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2007 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Mar 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
Abstract
A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.