Single electron transistor and method of manufacturing the same
US7955932B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.